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EE-SX670-WREE-SX670-WR Omron Photo MicrosensorEE-SX670-WR

EE-SX670-WR Omron Photo Microsensor

Category: .
Type Grooved Type (Standard)
Luminous method Non-modulated
Sensing method Through-beam type
Sensing distance 5 mm (slot width)
Operation mode Dark-ON/Light-ON (selectable)
Standard sensing object Opaque object (2 x 0.8 mm min.)
Differential distance elements 0.025 mm max.
Light source (Peak wavelength) Infrared LED (940 nm)
Indicator Light indicator (red)
Power supply voltage 5 to 24 VDC ±10% (ripple (p-p)10% max.)
Current consumption 35 mA max.
Control output (Output type) NPN Open collector output
Control output (Load power supply voltage) 5 to 24 VDC
Control output (Load current) 100 mA max.
Control output (Residual voltage) 0.8 V max. (at 100 mA load current)
0.4 V max. (at 40 mA load current)
Response frequency elements 1 kHz min. (average 3 kHz)
(See “Measurement condition of Response frequency elements”)
Illumination on the surface receiver Fluorescent light: 1000 lx max.
Ambient temperature Operating: -25 to 55 ℃
Storage: -30 to 80 ℃
(with no icing or condensation)
Ambient humidity Operating: 5 to 85% RH
Storage: 5 to 95% RH
(with no icing or condensation)
Vibration resistance 20 to 2000 Hz, peak acceleration 100 m/s**2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock resistance 500 m/s**2, 3 times each in X, Y, and Z directions
Degree of protection (IEC60529) IP50
Connection method Pre-wired models
Cable length 1 m
Material Case: Polybutylene phthalate (PBT)
Emitter/Receiver Cover: Polycarbonate(PC)

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